Modeling Multiple Quantum Well and Superlattice Solar Cells

Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N / GaN Multiple Quantum Well Solar Cells

The present study was conducted to investigate current density of0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostaticpressure. The effects of hydrostatic pressure were taken into account to measureparameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronholewave functions, absorption coefficient, and dielectric con...

Radiative Limits in Quantum Well Solar Cells

Quantum wells enable solar cell bandgaps to be tailored to the theoretical optimum, under the assumption of unity absorption. In practice however, quantum well regions are thinner and hence absorb less strongly than bulk material. We predict detailed balance efficiency limits for varying levels of absorptivity in singleand double-junction quantum-well solar cells. These calculations allow us to...

Coupled Quantum - Scattering Modeling of Thermoelectric Properties of Si/Ge/Si Quantum Well Superlattice

Confined structures presumably offer enhanced performance of thermoelectric devices. 1) Interfaces and boundaries create scattering sites for phonons, which reduces the thermal conductivity. 2) Reduced dimensionality increases the local density of states near the Fermi level, which increases the Seebeck coefficient. From these two phenomena, the net effect should be an increase in ZT, the perfo...

Modeling of novel lateral AlGaAs/GaAs quantum well solar cell

In this paper, a novel lateral quantum well (QW) solar cell has been introduced, and the structural parameters effects of these Nano-structures on the device’s performance have been investigated. For modeling, the continuity equation has been solved in the quasi neutral regions. However, to analyze the QWs’ effects, first Schrodinger – Poisson’s equations have been solved self-consistently. To ...

Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency